Discovery Early Career Researcher Award - Grant ID: DE200101669
Funder
Australian Research Council
Funding Amount
$410,316.00
Summary
Hydrogel Electrolytes for Flexible Rechargeable Zinc-Air Batteries. This project aims to advance the development of flexible rechargeable zinc-air batteries (ZABs) by innovating functional hydrogels as solid-state electrolytes. Flexible rechargeable ZABs are the most promising power source for emerging flexible electronics, but lacking of high-performance flexible electrolytes is a critical bottleneck for their applications. Based on hydrogel innovation, this project will address the most critic ....Hydrogel Electrolytes for Flexible Rechargeable Zinc-Air Batteries. This project aims to advance the development of flexible rechargeable zinc-air batteries (ZABs) by innovating functional hydrogels as solid-state electrolytes. Flexible rechargeable ZABs are the most promising power source for emerging flexible electronics, but lacking of high-performance flexible electrolytes is a critical bottleneck for their applications. Based on hydrogel innovation, this project will address the most critical challenges of flexible electrolytes in flexible rechargeable ZABs. Findings from this project will create new knowledge generated from multidisciplinary research and pave the way to realise a new generation of flexible rechargeable ZABs as a highly efficient and durable flexible energy storage technology.Read moreRead less
Towards room-temperature multiferroics by doping and ionic liquid gating . This project aims to develop new multiferroic materials for high performance computing and data storage technologies. Semiconductor industry leaders have identified the development of these materials, operating a room temperature, as a key challenge in enabling future high speed, high performance logic and memory devices. The intended outcomes of this work are (i) the delivery of new multiferroic materials by magnetic do ....Towards room-temperature multiferroics by doping and ionic liquid gating . This project aims to develop new multiferroic materials for high performance computing and data storage technologies. Semiconductor industry leaders have identified the development of these materials, operating a room temperature, as a key challenge in enabling future high speed, high performance logic and memory devices. The intended outcomes of this work are (i) the delivery of new multiferroic materials by magnetic doping of a semiconductor, strained to a ferroelectric state and (ii) the demonstration of a new paradigm in materials design to realise such materials. The key benefit of this work is the enabling of next generation computing and memory devices exhibiting higher speeds, reduced sizes and lower power consumption. Read moreRead less