Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobilit ....Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobility transistors grown using a broad variety of novel growth, processing and device innovations. The expected outcome of the program includes key advances in the areas of GaN materials growth, device processing and passivation technology, which will ultimately lead to breakthrough performance in ultra-low-noise electronics for high frequency systems.Read moreRead less
Analysis of Polynomial Phase Signals with Missing Observations. Many non-stationary signals in radar, physics and communications can be modelled as polynomial phase signals. These signals are often incomplete due to missing observations from intermittent sensor failures, outliers, receiver errors, periodic interference and inaccessibility of data. The aim of this project is to develop robust and computationally efficient methods for recovering such signals from small data sets when there is a la ....Analysis of Polynomial Phase Signals with Missing Observations. Many non-stationary signals in radar, physics and communications can be modelled as polynomial phase signals. These signals are often incomplete due to missing observations from intermittent sensor failures, outliers, receiver errors, periodic interference and inaccessibility of data. The aim of this project is to develop robust and computationally efficient methods for recovering such signals from small data sets when there is a large proportion of missing observations. This will contribute to a conceptual advancement in the field of signal processing and will provide new methods for use in applications such as radar, astrophysics, seismology, vibration analysis and communications.Read moreRead less
Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organis ....Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less
A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) ....A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less