Linkage Infrastructure, Equipment And Facilities - Grant ID: LE120100026
Funder
Australian Research Council
Funding Amount
$480,000.00
Summary
A surface characterisation facility. This surface characterisation facility will provide scientists with an understanding of material's surfaces and interfaces. This will lead to a range of new technologies and innovative solutions required to address the many resource and environmental challenges facing our planet now and in the future.
Towards energy-efficient lighting based on light-emitting diodes: the role of silicon carbide grown on Si Wafers. This project will investigate a potential solution to the problems of cost and quality of light-emitting diodes for solid-state lighting. The expected outcome is knowledge to underpin future development of solid-state lighting that is suitable for a wide replacement of the much less efficient and effective incandescent bulbs and fluorescent tubes.
Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enable ....Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.Read moreRead less