Asymmetric InP-based structures for high power laser diodes at 1400-1500 nm for pumping optical amplifiers used in communication systems. This project is aimed at obtaining high power, single mode 1400-1500 nm wavelength laser diodes using a novel design of asymmetric InP-based structures. These devices are in great demand for pumping of erbium-doped and Raman amplifiers for powering the next generation of dense wavelength division multiplexing optical networks. The low modal gain (confinement f ....Asymmetric InP-based structures for high power laser diodes at 1400-1500 nm for pumping optical amplifiers used in communication systems. This project is aimed at obtaining high power, single mode 1400-1500 nm wavelength laser diodes using a novel design of asymmetric InP-based structures. These devices are in great demand for pumping of erbium-doped and Raman amplifiers for powering the next generation of dense wavelength division multiplexing optical networks. The low modal gain (confinement factor) of this asymmetric structure is expected to reduce internal losses and hence increase the output power with better thermal dissipation. Single mode could be obtained by careful design in the trade-off between filamentation and threshold current. Ion implantation is also proposed to suppress higher order modes.Read moreRead less