Linkage Infrastructure, Equipment And Facilities - Grant ID: LE200100003
Funder
Australian Research Council
Funding Amount
$400,000.00
Summary
3D Nanofabrication and Nanocharacterisation facility. This project aims to establish a revolutionary nanoscale fabrication and characterisation facility in Australia. The facility is an angle-based nanoscale etching system with integrated chemical analysis capabilities and will be the first instrument of its kind in Australia. The facility will enable unprecedented fabrication and characterisation of 3D nanostructures and new device geometries from semiconductors, oxides and metals that underpin ....3D Nanofabrication and Nanocharacterisation facility. This project aims to establish a revolutionary nanoscale fabrication and characterisation facility in Australia. The facility is an angle-based nanoscale etching system with integrated chemical analysis capabilities and will be the first instrument of its kind in Australia. The facility will enable unprecedented fabrication and characterisation of 3D nanostructures and new device geometries from semiconductors, oxides and metals that underpin modern nanoelectronics for innovative energy, nano-optical and quantum device applications. This unique equipment will facilitate breakthrough discoveries in nanomaterials, and foster collaborations amongst Australian researchers to accelerate industry in advanced nanodevice technologies.Read moreRead less
High performance compound semiconductor nanowire optoelectronic devices. Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and electronic device applications. This project aims at developing a new generation of high performance nanowire-based light-emitting diodes (LEDs), lasers and photodetectors, which will make great contribution to the nation in the areas of science, technology and industry.
III-V semiconductor nanowires for ultrafast device applications. Nanowires are a new innovation enabling the integration of nanotechnology into conventional industrial semiconductor processes. This project will employ one of the unique properties that many nanowires exhibit - their very fast resetting time, to develop novel and innovative high-speed devices for electronic and optical applications.
Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires. The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation ....Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires. The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation of III-V nanowires by means of nano-characterisation to ultimately integrate high-quality III-V nanowires on silicon substrates. The new knowledge developed from this project is expected to provide critical insights for developing high-quality III-V nanowires integrated on silicon substrates.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100006
Funder
Australian Research Council
Funding Amount
$1,060,000.00
Summary
Ultra-high resolution focussed ion beam facility for Western Australia. Ultra-high resolution focussed ion beam facility: An ultra-high resolution dual beam facility (incorporating ion and electron beams) will provide 3D imaging, site-specific analysis and nano-machining to a wide range of internationally recognised Australian researchers across a broad spectrum of disciplines in the geosciences, engineering, biological and physical sciences. Providing critically needed access to this world-clas ....Ultra-high resolution focussed ion beam facility for Western Australia. Ultra-high resolution focussed ion beam facility: An ultra-high resolution dual beam facility (incorporating ion and electron beams) will provide 3D imaging, site-specific analysis and nano-machining to a wide range of internationally recognised Australian researchers across a broad spectrum of disciplines in the geosciences, engineering, biological and physical sciences. Providing critically needed access to this world-class infrastructure is expected to advance international competitiveness, leading to high-impact outcomes in smart materials, nanotechnology, bioscience, and geoscience, including support for the Australian resources sector.Read moreRead less
Towards phase, composition and homogeneity control in ternary nanowires. Semiconductor nanowires have enormous potential for large scale industry manufacturing as each individual nanowire represents one device. The aim of this project is the catalyst-free growth of ternary nanowires with control over structure, composition and homogeneity within the wire. Detailed electron microscopy analyses are essential to reconstruct a three-dimensional view of the nanowires and understand the growth mechani ....Towards phase, composition and homogeneity control in ternary nanowires. Semiconductor nanowires have enormous potential for large scale industry manufacturing as each individual nanowire represents one device. The aim of this project is the catalyst-free growth of ternary nanowires with control over structure, composition and homogeneity within the wire. Detailed electron microscopy analyses are essential to reconstruct a three-dimensional view of the nanowires and understand the growth mechanism at work. These structural characteristics determine the optical properties. It is expected that precise control over growth will allow the emission wavelength of the nanowires to be tuned and allow their use in optoelectronic device structures. Two innovative techniques are proposed using strain and patterned substrates for ternary nanowire growth.Read moreRead less
Ternary and quaternary III-V semiconductor nanowires and related quantum structures for optoelectronics applications. Growth of ternary and quaternary III-V compound semiconductor nanowires will open up the opportunity to develop high performance electronic and photonic devices. These nanowire devices underpin next generation electronics and photonics development potentially leading to innovative Australian technologies and industries.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE120100004
Funder
Australian Research Council
Funding Amount
$470,000.00
Summary
Thin film processing cluster: precise synthesis and nano-patterning of functional coatings. This facility will allow Australian researchers to create advanced functional materials with unprecedented control over material configurations and near atomic scale precision in dimensions. This will enable significant advances in high speed photonics and electronics, health and environment monitoring, and micro-energy sources.
Discovery Early Career Researcher Award - Grant ID: DE130101264
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Carbon nanotube-based supercapacitors: breaking the energy density limit. Novel electrodes will be nano-architectured by using ultralong single-walled carbon nanotube arrays and transition metal oxides to produce next-generation supercapacitors. The outcomes will lead to unprecedented energy densities in energy storage devices for sustainable future energy solutions.
Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconducto ....Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.Read moreRead less