Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge ....Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge and analysis tools for ongoing innovation and optimisation in semiconductor nanoelectronics.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100200
Funder
Australian Research Council
Funding Amount
$200,000.00
Summary
Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects wh ....Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects which will be essential before the development of frontier semiconductor technologies becomes possible.Read moreRead less
Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifun ....Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifunctional materials and new nanodevice structures which may open up unprecedented opportunities for both scientific and technological endeavoursRead moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
A fundamental study of electronic transport in advanced semiconductor nanostructures. The principal aim of this project is to attract and retain very high calibre early career researchers by providing them with the best-available infrastructure and research environment, combined with world-class supervision and mentoring. The project brings together an outstanding team of international collaborators, who will work with the early career researchers to ensure that they are trained and mentored at ....A fundamental study of electronic transport in advanced semiconductor nanostructures. The principal aim of this project is to attract and retain very high calibre early career researchers by providing them with the best-available infrastructure and research environment, combined with world-class supervision and mentoring. The project brings together an outstanding team of international collaborators, who will work with the early career researchers to ensure that they are trained and mentored at an international level. The new science, novel characterisation methods, and theoretical models that are outcomes of this project will provide new opportunities and expertise to advance the strategic defence and national security interests of Australia, and the emerging Australian semiconductor device and solar cell industry. Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less
Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifun ....Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifunctional materials and new nanodevice structures which may open up unprecedented opportunities for both scientific and technological endeavoursRead moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: Le110100200
Funder
Australian Research Council
Summary
Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects wh ....Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects which will be essential before the development of frontier semiconductor technologies becomes possible.Read moreRead less
Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages fo ....Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages for spintronics. This project aims to develop new materials and techniques for making hole spin-based electronics, engineer long-lived hole spin states, and develop the knowledge that will underpin future spintronic devices for the semiconductor industry.Read moreRead less