Improving optical data storage and micromachining technology through better modelling and characterisation of their laser beams. The laser sources generally do not have simple (Gaussian) distributions. The applicant has recently developed a model, describing free propagation of complex (non-Gaussian) laser beams. This project seeks to develop a comprehending model for laser beams propagation through complex optical systems. The effects of various optical elements will be defined employing a no ....Improving optical data storage and micromachining technology through better modelling and characterisation of their laser beams. The laser sources generally do not have simple (Gaussian) distributions. The applicant has recently developed a model, describing free propagation of complex (non-Gaussian) laser beams. This project seeks to develop a comprehending model for laser beams propagation through complex optical systems. The effects of various optical elements will be defined employing a novel method known as SAFE (Stable Aggregate of Flexible Elements) which is a compromise between geometrical and physical optics. Applying this model to micromachining and optical data storage (ODS), which need high beam quality (low divergence and good focussibility), enable accurate predictive capability critical to the optimisation of micromachining and ODS designs.Read moreRead less
Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact w ....Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact with intense THz laser fields. Experimentally, we plan to use Beijing FELs in China to study optoelectronic properties in GaAs-and GaN based systems. Theoretically, we intend developing fundamental new approaches to theory of electron interactions with intense laser fields in semiconductors and relating theoretical results to experiments and experimental findings.Read moreRead less