Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will m ....Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will make a significant contribution to the field of IC design as well as providing training for students to fill the present and future needs of Australia's IC design companies. Some of the most advanced cochlear implants, mobile phone ICs, and Wireless Internet ICs have been designed in Australia, and companies in Australia desperately need graduates skilled in designing in the latest technologies.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less