Stretchable Organic Transistors for Wearable Electronics and Robotics. The project aims to address the challenges of fabricating stretchable organic transistors for applications in wearable electronics and robotics through the development of new semiconducting polymers with stretchability and integrating them into novel, stretchable organic transistor configurations. The project will take a molecular engineering approach to the complex needs of this challenge by combining appropriate chemical f ....Stretchable Organic Transistors for Wearable Electronics and Robotics. The project aims to address the challenges of fabricating stretchable organic transistors for applications in wearable electronics and robotics through the development of new semiconducting polymers with stretchability and integrating them into novel, stretchable organic transistor configurations. The project will take a molecular engineering approach to the complex needs of this challenge by combining appropriate chemical functionality which provides high charge carrier mobility with judiciously placed flexible spacers and side chains to provide mechanical dexterity. These novel polymers will be integrated into transistor structures and their fabricated arrays deposited on stretchable substrates will be used for a real world applications.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100084
Funder
Australian Research Council
Funding Amount
$760,000.00
Summary
Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ....Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ferroic films, and a magneto-directional electrical characterisation system with a unique nine Tesla full-sphere magnetic field rotation capacity for studying materials in the two to 300 Kelvin temperature range. This facility will bring important new tools to Australia, which is expected to enhance our international competitiveness in the development of next-generation electronic materials and device technologies.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100200
Funder
Australian Research Council
Funding Amount
$200,000.00
Summary
Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects wh ....Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects which will be essential before the development of frontier semiconductor technologies becomes possible.Read moreRead less
Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifun ....Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifunctional materials and new nanodevice structures which may open up unprecedented opportunities for both scientific and technological endeavoursRead moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less