Stretchable Organic Transistors for Wearable Electronics and Robotics. The project aims to address the challenges of fabricating stretchable organic transistors for applications in wearable electronics and robotics through the development of new semiconducting polymers with stretchability and integrating them into novel, stretchable organic transistor configurations. The project will take a molecular engineering approach to the complex needs of this challenge by combining appropriate chemical f ....Stretchable Organic Transistors for Wearable Electronics and Robotics. The project aims to address the challenges of fabricating stretchable organic transistors for applications in wearable electronics and robotics through the development of new semiconducting polymers with stretchability and integrating them into novel, stretchable organic transistor configurations. The project will take a molecular engineering approach to the complex needs of this challenge by combining appropriate chemical functionality which provides high charge carrier mobility with judiciously placed flexible spacers and side chains to provide mechanical dexterity. These novel polymers will be integrated into transistor structures and their fabricated arrays deposited on stretchable substrates will be used for a real world applications.Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less