Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100084
Funder
Australian Research Council
Funding Amount
$760,000.00
Summary
Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ....Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ferroic films, and a magneto-directional electrical characterisation system with a unique nine Tesla full-sphere magnetic field rotation capacity for studying materials in the two to 300 Kelvin temperature range. This facility will bring important new tools to Australia, which is expected to enhance our international competitiveness in the development of next-generation electronic materials and device technologies.Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less