ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less