Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will m ....Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will make a significant contribution to the field of IC design as well as providing training for students to fill the present and future needs of Australia's IC design companies. Some of the most advanced cochlear implants, mobile phone ICs, and Wireless Internet ICs have been designed in Australia, and companies in Australia desperately need graduates skilled in designing in the latest technologies.Read moreRead less
The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This pro ....The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This project plans to use silicon-based single-electron-transistor technology to undertake high-precision measurements. The project expects to contribute to the technological basis for a new world current standard.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100084
Funder
Australian Research Council
Funding Amount
$760,000.00
Summary
Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ....Next-Generation Electronic and Magnetic Materials Characterisation Facility. Next-generation electronic and magnetic materials characterisation facility: This project aims to address two major experimental capacity gaps in Australian infrastructure for research and development of novel electronic materials and nanoscale devices for future technologies. It will establish a facility featuring a state-of-the-art force-feedback scanning tunnelling microscope for studying insulating surfaces, such as ferroic films, and a magneto-directional electrical characterisation system with a unique nine Tesla full-sphere magnetic field rotation capacity for studying materials in the two to 300 Kelvin temperature range. This facility will bring important new tools to Australia, which is expected to enhance our international competitiveness in the development of next-generation electronic materials and device technologies.Read moreRead less
Rational Design of Novel Multiferroic Materials for Energy Harvesting and Energy Efficiency. Multiferroics are a class of fundamentally complex materials in which several ferroic orders (for example, ferroelectric and ferromagnetic) coexist. The coupling between their electric and magnetic degrees of freedom is controllable via stress and external fields, thus opening the possibility for breakthrough technological developments. By working at the frontier of complex nanostructured oxide materials ....Rational Design of Novel Multiferroic Materials for Energy Harvesting and Energy Efficiency. Multiferroics are a class of fundamentally complex materials in which several ferroic orders (for example, ferroelectric and ferromagnetic) coexist. The coupling between their electric and magnetic degrees of freedom is controllable via stress and external fields, thus opening the possibility for breakthrough technological developments. By working at the frontier of complex nanostructured oxide materials, this project aims to establish the rational basis for systematic design of novel artificially layered multiferroics, develop accurate and computationally affordable methods to simulate these materials under finite-temperature conditions, and exploit this knowledge to devise likely revolutionary photovoltaic, nanoelectronic and energy conversion applications.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE120100702
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Single atom based quantum metrology. Taking advantage of the natural properties of a single atom embedded in an industrial nano-device, this project will improve the quantum standard for current and will lead to a more accurate determination of the fundamental constants of nature, thus providing broad benefits to Australian Science, Technology and Industry.
Single electron pumping for current measurement standards. Precision measurement standards for electric current and voltage are necessary to ensure the safe and accurate operation of much of the electronic equipment that underpins modern society. This project will develop a new ultra-high-precision current standard, providing a missing link in today's world standards for electrical measurement.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100172
Funder
Australian Research Council
Funding Amount
$270,000.00
Summary
Inductively-coupled plasma etching facility. Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high ....Inductively-coupled plasma etching facility. Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high rates of throughput so this etcher will be a crucial enabling tool for efficient fabrication of nano-devices for research into quantum computing, high bandwidth, quantum-secure optical communications, renewable energy, and for applications in medicine. The etcher will be available for national access.Read moreRead less
Back to the future: making atomic-scale high-speed germanium transistors. This project links scientists from Australia and Italy to develop atomic-scale devices in the germanium material. By exploiting the unique properties of this material and its integration with silicon, faster and smaller transistors will be developed.
Electron transport in semiconductor nanowire devices - Setting two top nanoelectronics problems on the straight and narrow. This project will establish a new program to build electronic devices using tiny semiconductor nanowires. This project will contribute strongly to Australia's ongoing efforts in semiconductor nanotechnology and quantum information science, and allow Australia to play a leading role in the development of the next generation of electronics technologies.