Unravelling the structural origin of cyclic fatigue in ferroelectrics. Ferroelectric materials have extensive applications in electromechanical devices and memories and in service are often subjected to repeat mechanical and/or electrical loading, leading to cyclic fatigue and failure. This project aims to apply in-situ electron microscopy techniques and computational modelling to explore cyclic ferroelectric fatigue behaviour and to understand the relationships between local atomic scale struct ....Unravelling the structural origin of cyclic fatigue in ferroelectrics. Ferroelectric materials have extensive applications in electromechanical devices and memories and in service are often subjected to repeat mechanical and/or electrical loading, leading to cyclic fatigue and failure. This project aims to apply in-situ electron microscopy techniques and computational modelling to explore cyclic ferroelectric fatigue behaviour and to understand the relationships between local atomic scale structure and fatigue. The structural origin of ferroelectric fatigue has not been clear because of the limitations of previous measurement capabilities. This project will provide guidance in materials design to increase ferroelectric fatigue lifetime for more reliable ferroelectric-based electronic devices.Read moreRead less
Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and fu ....Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and functionalities. Expected outcomes include epitaxial functional oxides on Gallium arsenide with ultrahigh, room-temperature sheet electron mobility and a comprehensive understanding of its microscopic origin. This will fundamentally change the route toward novel transistors based on high speed and low energy oxide electronics.Read moreRead less