Development of inert gas ion beams for fabrication of nano-structures. This project will develop a high brightness, high density ion beam for reactive fabrication of structures with dimensions of the order of and less than 100 nano-metres. Present systems use liquid metal ion sources which can pollute the substrates being fabricated. Use of inert gas ions will overcome this problem and lead to a new type of ion source to replace the older systems. Added advantages include significantly increased ....Development of inert gas ion beams for fabrication of nano-structures. This project will develop a high brightness, high density ion beam for reactive fabrication of structures with dimensions of the order of and less than 100 nano-metres. Present systems use liquid metal ion sources which can pollute the substrates being fabricated. Use of inert gas ions will overcome this problem and lead to a new type of ion source to replace the older systems. Added advantages include significantly increased lifetime much higher reproducibility. Our commercial collaborator, FEI Company, estimate the world market as being $US100,000,000 and will actively promote this technology worldwide when it is fully developed.Read moreRead less
Implant Isolation of III-V Compound Semiconductor Devices and Structures. Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aim ....Implant Isolation of III-V Compound Semiconductor Devices and Structures. Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aims to develop an implant isolation scheme for a new class of devices developed by Epitactix, an Australian start-up company founded on CSIRO research. This will be achieved by combining the ANU's experience and expertise in ion-irradiation and defect engineering with the device and processing expertise of Epitactix Pty Ltd.Read moreRead less