Investigation of 1/f noise mechanisms in HgCdTe heterostructure IR photodiodes. Since the performance of any photon detector is defined by its signal to noise ratio, the reduction of noise generating mechanisms is equally important to improvement of the signal. In this project we propose to carry out, for the first time, a comprehensive analysis of noise generating mechanisms in HgCdTe detectors using recently developed, two-dimensional analysis procedure. The main objective of this project is t ....Investigation of 1/f noise mechanisms in HgCdTe heterostructure IR photodiodes. Since the performance of any photon detector is defined by its signal to noise ratio, the reduction of noise generating mechanisms is equally important to improvement of the signal. In this project we propose to carry out, for the first time, a comprehensive analysis of noise generating mechanisms in HgCdTe detectors using recently developed, two-dimensional analysis procedure. The main objective of this project is to prove that 1/f noise in HgCdTe photodetectors is caused by dark current fluctuations in the high electric field regions of the detector structure. The primary outcome of this work will be the first comprehensive two-dimensional device model that can predict 1/f noise in a semiconductor device.Read moreRead less