Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0561136
Funder
Australian Research Council
Funding Amount
$376,352.00
Summary
36-megapixel CCD camera for wide-field astronomy. This project aims to design and build a state-of-the-art 36-megapixel charge-coupled device (CCD) camera for wide-field imaging on a robotic telescope at Siding Spring Observatory. The camera will employ a mosaic of two 18-megapixel CCDs, which are amongst the largest ever fabricated. This new facility will have an unprecedented ability to obtain precision photometry over a wide field, and will enable breakthroughs in research into areas as diver ....36-megapixel CCD camera for wide-field astronomy. This project aims to design and build a state-of-the-art 36-megapixel charge-coupled device (CCD) camera for wide-field imaging on a robotic telescope at Siding Spring Observatory. The camera will employ a mosaic of two 18-megapixel CCDs, which are amongst the largest ever fabricated. This new facility will have an unprecedented ability to obtain precision photometry over a wide field, and will enable breakthroughs in research into areas as diverse as detection of extra-solar planets and nearby supernovae. The camera will also lead to collaborative research with ANU's newly-funded Skymapper telescope, as well as the Anglo-Australian Observatory's 6dF and 2dF instruments.Read moreRead less
Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impu ....Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.Read moreRead less
High efficiency III-V solar cells based on low-dimensional quantum confined heterostructures. There is no doubt that clean and sustainable solar energy is one of the most viable energy sources to address the issues of climate change, global warming and depletion of conventional energy sources. With the great advantages offered by quantum confined nanostructures and nanotechnology, this project may lead to substantial efficiency improvement of current III-V solar cells (already higher efficiency ....High efficiency III-V solar cells based on low-dimensional quantum confined heterostructures. There is no doubt that clean and sustainable solar energy is one of the most viable energy sources to address the issues of climate change, global warming and depletion of conventional energy sources. With the great advantages offered by quantum confined nanostructures and nanotechnology, this project may lead to substantial efficiency improvement of current III-V solar cells (already higher efficiency than Si solar cells), making great contribution to the society and Nation in the areas of science, technology, environment, and economy.Read moreRead less
Development of high performance wide-bandgap polar oxide electronic and optoelectronic devices. The research and development of high performance electronic and optoelectronic devices based on polar semiconductors have numerous practical applications in future communication systems and power electronic network. This project aims to generate exciting breakthrough science for novel polar oxide devices. The technologies developed through this project may lead to immediate applications and commercial ....Development of high performance wide-bandgap polar oxide electronic and optoelectronic devices. The research and development of high performance electronic and optoelectronic devices based on polar semiconductors have numerous practical applications in future communication systems and power electronic network. This project aims to generate exciting breakthrough science for novel polar oxide devices. The technologies developed through this project may lead to immediate applications and commercialization of high performance devices in sensing, detection and communication, bringing enormous economic benefit for the Nation. The international collaboration will provide invaluable resources for both scientific research and technology development and keep Australia at the forefront in this field.Read moreRead less
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Ou ....Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.Read moreRead less
Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the ....Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the resulting amorphous-phase structure. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less
Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angu ....Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.Read moreRead less