Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impu ....Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.Read moreRead less
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Ou ....Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0561240
Funder
Australian Research Council
Funding Amount
$121,510.00
Summary
Combined reactor for the plasma-enhanced chemical vapour deposition (PECVD) of amorphous layers of silicon, silicon nitride and silicon oxide, and for Reactive Ion Etching. Our small, but very productive group (up to 30 publications per Discovery grant) has reached critical mass (8 people), and the acquisition of essential infrastructure is peremptory. Without the proposed plasma reactor our strong international impact (10 papers, one invited, at the 2003 world conference on photovoltaics) will ....Combined reactor for the plasma-enhanced chemical vapour deposition (PECVD) of amorphous layers of silicon, silicon nitride and silicon oxide, and for Reactive Ion Etching. Our small, but very productive group (up to 30 publications per Discovery grant) has reached critical mass (8 people), and the acquisition of essential infrastructure is peremptory. Without the proposed plasma reactor our strong international impact (10 papers, one invited, at the 2003 world conference on photovoltaics) will wane. This machine permits to deposit thin layers of silicon nitride and amorphous silicon and is a versatile tool for investigating silicon materials for photovoltaics and microelectronics. Such reactors have become an essential tool for silicon solar cell work. Most laboratories across the world have at least one, including UNSW, but access to the latter is impractical.Read moreRead less
Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the ....Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the resulting amorphous-phase structure. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less
Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angu ....Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.Read moreRead less