Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the deple ....Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.Read moreRead less
ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE160101334
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. Howeve ....Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. However, no reliable fabrication techniques currently exist at the targeted sub-10-nanometre scale and basic scientific investigation of the operation of these ultimately small devices is needed. The project plans to use innovative approaches to investigate the physics of atomic-scale electronic devices and explore entirely new device concepts and functionalities for future quantum electronics.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE120100702
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Single atom based quantum metrology. Taking advantage of the natural properties of a single atom embedded in an industrial nano-device, this project will improve the quantum standard for current and will lead to a more accurate determination of the fundamental constants of nature, thus providing broad benefits to Australian Science, Technology and Industry.
Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of tw ....Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of twisted semiconductor superlattices, such that they can be produced with desired properties on demand. The benefits of the project will be new materials for electronics and optoelectronics applications, new links to international organisations, and training of students and postdocs for careers in nanoelectronics. Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE160101490
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly m ....Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly measuring their wave functions and quasi-particle excitations with atomic scale resolution. By applying these methods to systems with very large topological gaps, the anticipated results will provide a foundation for robust high-temperature, industry-compatible spintronics. The intended outcomes may improve computational speed in new information technologies and reduce power consumption.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE140100775
Funder
Australian Research Council
Funding Amount
$394,177.00
Summary
Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artif ....Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artificial graphene and topological insulators made using existing nanofabrication techniques on conventional semiconductors already used by industry. This will make it possible to study the unique electronic properties of these materials with unprecedented control, with the ultimate aim of using artificially designed electronic materials in industry.Read moreRead less