Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impu ....Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.Read moreRead less
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Ou ....Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.Read moreRead less
Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the ....Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the resulting amorphous-phase structure. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less