ORCID Profile
0000-0001-8970-6058
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Materials Engineering Not Elsewhere Classified | Curatorial and Related Studies | Geochronology | Geology | Condensed Matter Physics | Museum Studies | Geology | Instruments And Techniques | Ore Deposit Petrology | European History (excl. British, Classical Greek and Roman) | Resource geoscience | Mineralogy and crystallography | Exploration geochemistry | Maritime Archaeology | Condensed Matter Physics—Electronic And Magnetic Properties;
ANZSRC Socio-Economic Objective (SEO)
Metals (composites, coatings, bonding, etc.) | Understanding Europe's Past | Understanding Australia's Past | Conserving Collections and Movable Cultural Heritage | Physical sciences | Scientific instrumentation | Alumina production |
Related Links
Publications
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Publisher: American Chemical Society (ACS)
Date: 21-02-2006
DOI: 10.1021/NL052189O
Abstract: We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of in idual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
Colloidal quasi-one-dimensional dual semiconductor core/shell nanorod couple heterostructures with blue fluorescence
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9NR02443C
Abstract: ZnS (short arms)–ZnSe (long arms)/ZnS shell nanorod couple heterostructures was prepared and over-coated by a CdS layer to generate blue emission.
Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing
Publisher: Elsevier BV
Date: 03-2016
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
Publisher: Pleiades Publishing Ltd
Date: 10-1998
DOI: 10.1134/1.1187563
Ion implantation in diamond using 30keV Ga+ focused ion beam
Publisher: Elsevier BV
Date: 08-2011
Catalytic oxidation of organic pollutants on pristine and surface nitrogen-modified carbon nanotubes with sulfate radicals
Publisher: Elsevier BV
Date: 07-2014
A new metal-free carbon hybrid for enhanced photocatalysis
Publisher: American Chemical Society (ACS)
Date: 25-09-2014
DOI: 10.1021/AM503820H
Abstract: Carbon nitride (C3N4) is a layered, stable, and polymeric metal-free material that has been discovered as a visible-light-response photocatalyst. Owing to C3N4 having a higher conduction band position, most previous studies have been focused on its reduction capability for solar fuel production, such as hydrogen generation from water splitting or hydrocarbon production from CO2. However, photooxidation ability of g-C3N4 is weak and has been less explored, especially for decomposition of chemically stable phenolics. Carbon spheres prepared by a hydrothermal carbonization of glucose have been widely applied as a support material or template due to their interesting physicochemical properties and the functional groups on the reactive surface. This study demonstrated that growth of carbon nanospheres onto g-C3N4 (CN-CS) can significantly increase the photooxidation ability (to about 4.79 times higher than that of pristine g-C3N4) in phenol degradation under artificial sunlight irradiations. The crystal structure, optical property, morphology, surface groups, recombination rate of electron/hole pairs, and thermal stability of CN-CS were investigated by a variety of characterization techniques. This study contributes to the further promising applications of carbon nitride in metal-free catalysis.
Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C
Publisher: Pleiades Publishing Ltd
Date: 07-1998
DOI: 10.1134/1.1187483
Measurements of insulator band parameters using combination of single-electron and two-electron spectroscopy
Publisher: Elsevier BV
Date: 02-2004
ZrO2 film interfaces with si and SiO2
Publisher: AIP Publishing
Date: 08-2005
DOI: 10.1063/1.1994938
Abstract: The interface formed by the thermal oxidation of sputter-deposited Zr metal onto Si(100)- and SiO2-coated Si(100) wafers was studied in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5–4.5 photon energy range and mass spectrometry of recoiled ions (MSRI). SE yielded optical properties for the film and interface and MSRI yielded film and interface composition. An optical model was developed and verified using transmission electron microscopy. Interfacial reaction of the ZrO2 was observed for both substrates, with more interaction for Si substrates. Equivalent oxide thicknesses and interface trap levels were determined on capacitors with lower trap levels found on s les with a thicker SiO2 underlayer. In addition to the optical properties for the intermixed interface layer, the optical properties for Zr metal and unreacted ZrO2 are also reported.
Spin-orbit effects in the (e,2e) scattering from a W(110) surface and thin gold layer
Publisher: IOP Publishing
Date: 04-2011
Spin-related Effects in Scattering of Spin-Polarized Low-energy Electrons from Magnetic and Nonmagnetic Surfaces
Publisher: IOP Publishing
Date: 05-11-2012
The formation of fluvio-lacustrine ferruginous pisoliths in the extensive palaeochannels of the Yilgarn Craton, Western Australia
Publisher: Elsevier BV
Date: 11-2014
Local stresses induced by nanoscale As–Sb clusters in GaAs matrix
Publisher: AIP Publishing
Date: 21-01-2002
DOI: 10.1063/1.1426691
Abstract: Microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta doped with Sb was studied by transmission electron microscopy. The material contained 0.5 at. % excess of arsenic that precipitated during post growth anneals. The Sb δ doping was found to strongly affect the microstructure of precipitates (clusters) and their ripening rate upon annealing. Segregation of Sb impurity in the clusters was revealed. In contrast to the well known pure As clusters, the As–Sb clusters induced strong local deformations in the surrounding GaAs matrix. Until a threshold diameter of 7–8 nm the clusters and surrounding matrix were coherently strained. Larger clusters were associated with dislocation loops of interstitial type. The cluster-loop orientation relationships were determined. Relaxation of local strains by formation of the dislocation loops was studied both experimentally and theoretically.
Tranquillityite: The last lunar mineral comes down to Earth
Publisher: Geological Society of America
Date: 2012
DOI: 10.1130/G32525.1
Charge Contrast Imaging In Variable Pressure Sem: Correlation, Optimisation And Application
Publisher: Oxford University Press (OUP)
Date: 08-2002
Electron escape from self-assembled InAs/GaAs quantum dot stacks
Publisher: Elsevier BV
Date: 06-1998
Magnesium oxide as a candidate high-kappa gate dielectric
Publisher: AIP Publishing
Date: 03-04-2006
DOI: 10.1063/1.2191419
Abstract: Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (κ) and interface traps were determined. An amorphous SiO2 layer was found at the MgO∕Si interface as a result of subcutaneous Si oxidation. κ for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO∕Si were found to be comparable with SiO2∕Si, rendering MgO competitive with all presently considered high-κ dielectrics.
Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealing
Publisher: AIP Publishing
Date: 07-04-2008
DOI: 10.1063/1.2896642
Abstract: Epitaxial ZnO thin films were grown on c-plane sapphire substrates by rf magnetron sputtering at room temperature followed by a rapid thermal annealing process. We found that crystallinity of the films was strongly affected by the partial oxygen pressure during deposition. Both x-ray diffraction and transmission electron microscopy studies revealed that the ZnO films grow epitaxially predominantly with aligned ZnO domains. An unresolved excitonic resonance was observed in the optical absorption spectrum. Nevertheless, refractive index and absorption edge of the ZnO films are similar to that of single crystal ZnO.
The Iron Distribution and Magnetic Properties of Schistosome Eggshells: Implications for Improved Diagnostics
Publisher: Public Library of Science (PLoS)
Date: 16-05-2013
Precipitation of iron silicate nanoparticles in early Precambrian oceans marks Earth’s first iron age
Publisher: Geological Society of America
Date: 04-2015
DOI: 10.1130/G36309.1
Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
Publisher: AIP Publishing
Date: 12-1999
DOI: 10.1063/1.371651
Abstract: 6H–SiC wafers were implanted at room temperature (RT) and at 1700 °C high temperature (HT) with 50 keVAl+ ions to doses from 1.4×1014 to 1.4×1016 cm−2. Compared to s les implanted at RT, the s les implanted at high temperature display considerable aluminum redistribution. The diffusion of Al is shown to be a transient effect with different decay times in the near-surface region and in the bulk. Investigation of the crystalline structure indicated that in the near-surface region dislocation loops grow in size and Al precipitates are formed as the dose of Al implanted at HT is increased. Changes in the structure of the implanted layer may have a strong effect on the redistribution of Al. The observed redistribution can be explained by a dissociative diffusion mechanism during the high-temperature implantation.
Nanoparticle suspensions from carbon-rich fluid make high-grade gold deposits
Publisher: Springer Science and Business Media LLC
Date: 07-2022
DOI: 10.1038/S41467-022-31447-5
Abstract: Economic gold deposits result from a 100- to 10,000-fold enrichment in gold relative to crustal background. In hydrothermal systems, this enrichment is achieved through the transport and accumulation of metals via deeply sourced fluids to a site of deposition. However, the generally low metal solubility of Au in aqueous solutions in orogenic systems requires additional processes in order to explain high-grade gold formation. Reports of Au nanoparticles in high-grade gold veins infer that their formation is linked to mineralisation. However, processes leading to nanoparticle nucleation and deposition remain poorly understood. Here we show that formation of metal nanoparticles (Au, AuAg, Cu, Ag 2 O) is one of the essential contributors to efficient and focused gold deposition. We report systematic and previously unrecognized metal nanoparticles preserved in amorphous silica and/or carbonic phases in five high-grade deposits. The association of metal, silica and carbonic phases helps to constrain the multiple reactive processes involved in Au, Cu and Ag metallogenesis and formation of high-grade gold mineralisation.
Correlation between microstructural and magnetic properties of Tb implanted ZnO
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4802337
Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Publisher: AIP Publishing
Date: 27-08-2001
DOI: 10.1063/1.1394166
Abstract: As–Sb compositional intermixing was studied by transmission electron microscopy (TEM) in GaAs films grown by molecular-beam epitaxy at low temperature (LT) and δ doped with antimony. The TEM technique was calibrated by imaging the as-grown films with δ layers containing various amounts of Sb. The calibration allowed us to deduce the effective As–Sb interdiffusion coefficient from apparent thickness of the Sb δ layers in the films subjected to isochronal anneals at 400–600 °C. The As–Sb intermixing in LT GaAs was found to be much enhanced when compared to conventional material. Its temperature dependence yields a diffusion coefficient of DAs–Sb=2×10−14 exp(−0.62±0.15 eV/kt) cm2 s−1. Since the kick-out mechanism operating under equilibrium conditions is valid for As–Sb interdiffusion in GaAs, the enhanced intermixing was attributed to an oversaturation of arsenic self-interstitials in the LT GaAs films. The effective activation energy for As–Sb interdiffusion in LT GaAs seems to be reasonably close to the migration enthalpy of As interstitials, whereas their concentration was roughly estimated as 1018 cm−3.
Modulation of a quantum well potential by a quantum-dot array
Publisher: Pleiades Publishing Ltd
Date: 1997
DOI: 10.1134/1.1187055
Greenalite precipitation linked to the deposition of banded iron formations downslope from a late Archean carbonate platform
Publisher: Elsevier BV
Date: 03-2017
The occurrence and composition of chevkinite-(Ce) and perrierite-(Ce) in tholeiitic intrusive rocks and lunar mare basalt
Publisher: Mineralogical Society of America
Date: 10-2014
DOI: 10.2138/AM-2014-4690
Gallium Plasmonic Nanoantennas Unveiling Multiple Kinetics of Hydrogen Sensing, Storage, and Spillover
Publisher: Wiley
Date: 02-06-2021
Abstract: Hydrogen is the key element to accomplish a carbon‐free based economy. Here, the first evidence of plasmonic gallium (Ga) nanoantennas is provided as nanoreactors supported on sapphire (α‐Al 2 O 3 ) acting as direct plasmon‐enhanced photocatalyst for hydrogen sensing, storage, and spillover. The role of plasmon‐catalyzed electron transfer between hydrogen and plasmonic Ga nanoparticle in the activation of those processes is highlighted, as opposed to conventional refractive index‐change‐based sensing. This study reveals that, while temperature selectively operates those various processes, longitudinal (LO‐LSPR) and transverse (TO‐LSPR) localized surface plasmon resonances of supported Ga nanoparticles open selectivity of localized reaction pathways at specific sites corresponding to the electromagnetic hot‐spots. Specifically, the TO‐LSPR couples light into the surface dissociative adsorption of hydrogen and formation of hydrides, whereas the LO‐LSPR activates heterogeneous reactions at the interface with the support, that is, hydrogen spillover into α‐Al 2 O 3 and reverse‐oxygen spillover from α‐Al 2 O 3. This Ga‐based plasmon‐catalytic platform expands the application of supported plasmon‐catalysis to hydrogen technologies, including reversible fast hydrogen sensing in a timescale of a few seconds with a limit of detection as low as 5 ppm and in a broad temperature range from room‐temperature up to 600 °C while remaining stable and reusable over an extended period of time.
Thermally stable coexistence of liquid and solid phases in gallium nanoparticles
Publisher: Springer Science and Business Media LLC
Date: 25-07-2016
DOI: 10.1038/NMAT4705
Abstract: Gallium (Ga), a group III metal, is of fundamental interest due to its polymorphism and unusual phase transition behaviours. New solid phases have been observed when Ga is confined at the nanoscale. Herein, we demonstrate the stable coexistence, from 180 K to 800 K, of the unexpected solid γ-phase core and a liquid shell in substrate-supported Ga nanoparticles. We show that the support plays a fundamental role in determining Ga nanoparticle phases, with the driving forces for the nucleation of the γ-phase being the Laplace pressure in the nanoparticles and the epitaxial relationship of this phase to the substrate. We exploit the change in the litude of the evolving surface plasmon resonance of Ga nanoparticle ensembles during synthesis to reveal in real time the solid core formation in the liquid Ga nanoparticle. Finally, we provide a general framework for understanding how nanoscale confinement, interfacial and surface energies, and crystalline relationships to the substrate enable and stabilize the coexistence of unexpected phases.
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
Publisher: Pleiades Publishing Ltd
Date: 10-1998
DOI: 10.1134/1.1187575
MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
Publisher: Springer Science and Business Media LLC
Date: 1999
DOI: 10.1557/PROC-571-109
Abstract: In the present work we study the effect of vertical alignment in the quantum dot array formed by successive deposition of several rows of InAlAs and InGaAs quantum dots separated by thin AIGaAs spacer layers. Transmission electron microscopy and photoluminescence studies revealed that the InAlAs QDs characterized by high areal density force InGaAs to be transformed into the denser array as compared to the case of spontaneous transformation. Using denser array of composite quantum dots in the active region of a diode laser leads to the increase in modal gain, decrease in internal loss, and decrease in the threshold current density for short cavity diodes. Room temperature continuous wave output power as high as 3.3 W at 0.87 µm is achieved.
CHARACTERISTICS OF LOW TEMPERATURE PECVD SILICON NITRIDE FOR MEMS STRUCTURAL MATERIALS
Publisher: World Scientific Pub Co Pte Lt
Date: 30-10-2006
DOI: 10.1142/S0217979206040398
Abstract: Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.
Dust to dust: Evidence for the formation of “primary” hematite dust in banded iron formations via oxidation of iron silicate nanoparticles
Publisher: Elsevier BV
Date: 10-2016
Evidence and origin of different types of sedimentary organic matter from a Paleoproterozoic orogenic Au deposit
Publisher: Elsevier BV
Date: 09-2017
Structural transformation of implanted diamond layers during high temperature annealing
Publisher: Elsevier BV
Date: 12-2015
A selective laser melting and solution heat treatment refined Al-12Si alloy with a controllable ultrafine eutectic microstructure and 25% tensile ductility
Publisher: Elsevier BV
Date: 08-2015
TEM and cathodoluminescence studies of porous SiC
Publisher: IOP Publishing
Date: 10-1998
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
Publisher: Trans Tech Publications, Ltd.
Date: 06-2004
Bistability of charge accumulated in low-temperature-grown GaAs
Publisher: AIP Publishing
Date: 09-11-1998
DOI: 10.1063/1.122593
Abstract: Capacitance–voltage characteristics were studied at various temperatures for Schottky barriers formed on n-GaAs/low-temperature-grown (LT)-GaAs/n-GaAs sandwich structures. Charge accumulation at deep traps in the LT-GaAs layer was observed. At room temperature, the C–V characteristics were found to be step-like with a wide plateau originated from emission of electrons accumulated in the LT-GaAs layer. At the temperature below 100 K, the electron emission from the LT-GaAs layer was completely suppressed. At intermediate temperatures (150–200 K), an effect of charge bistability was observed, which manifested itself as a hysteresis in the capacitance under sweeping the reverse dc bias. We suppose that the phenomenon takes place when the sweeping rate is higher than the electron emission rate but lower than the electron capture rate by the deep traps in the LT-GaAs layer.
Structural Materials for NEMS/MEMS Devices
Publisher: IEEE
Date: 2006
Apatite nanoparticles in 3.46–2.46 Ga iron formations: Evidence for phosphorus-rich hydrothermal plumes on early Earth
Publisher: Geological Society of America
Date: 05-02-2021
DOI: 10.1130/G48374.1
Abstract: Phosphorus is an essential nutrient that is thought to have regulated primary productivity in global oceans after the advent of oxygenic photosynthesis. The prime source of seawater phosphorus is regarded to be continental weathering of phosphate minerals. Ancient seawater phosphorus concentrations have been constrained using the phosphorus content of iron-rich chemical sediments—banded iron formations (BIFs) however, the removal processes and depositional phases remain unclear. Here we report that nanometer-sized apatite crystals (& nm) are ubiquitous in 3.46–2.46 Ga BIFs and cherts from the Kaapvaal (South Africa) and Yilgarn, and Pilbara (Western Australia) cratons. The apatite is uniformly dispersed in a chemical sediment comprising greenalite nanoparticles, which were encased in very early diagenetic silica cement that limited compaction and chemical reactions. The lack of organic carbon (below detection & .3 wt%) and absence of primary iron oxides implies that the phosphorus was not derived from the degradation of organic matter or seawater scavenging by oxide particles. Instead, the occurrence of apatite in sediments derived from hydrothermally sourced Fe2+ and SiO2(aq) suggests that phosphorus too was derived from vent plumes. Today, seawater P is rapidly removed from vent fluids due to scavenging by oxidized Fe2+. However, prior to the Great Oxidation Event (2.45–2.32 Ga), dissolved phosphorus released during anoxic alteration of seafloor basalts escaped the iron-oxidation trap. Our results point to the existence of a submarine hydrothermal flux of dissolved phosphorus that supplied nutrients to the early anoxic oceans. High amounts of seawater P may help to explain why phosphorus is ubiquitous in cell biology—it was not limiting during the origin and early evolution of life.
Structural and compositional complexity of nitrogen implantation in silicon carbide
Publisher: Elsevier BV
Date: 02-2012
Secondary-electron emission mechanism of LiF film by (e,2e) spectroscopy
Publisher: Elsevier BV
Date: 2004
Cubic Phase Sn-Rich GeSn Nanocrystals in a Ge Matrix
Publisher: American Chemical Society (ACS)
Date: 03-03-2014
DOI: 10.1021/CG401652F
One-pot hydrothermal synthesis of ZnO-reduced graphene oxide composites using Zn powders for enhanced photocatalysis
Publisher: Elsevier BV
Date: 08-2013
Nanogeochemistry of hydrothermal magnetite
Publisher: Springer Science and Business Media LLC
Date: 17-05-2018
Optical properties of InAlAs quantum dots in an AlGaAs matrix
Publisher: Elsevier BV
Date: 1998
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy
Publisher: Pleiades Publishing Ltd
Date: 08-2001
DOI: 10.1134/1.1393030
Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Publisher: Springer Science and Business Media LLC
Date: 04-06-2021
Charge-Related Problems Associated with X-Ray Microanalysis in the Variable Pressure Scanning Electron Microscope at Low Pressures
Publisher: Oxford University Press (OUP)
Date: 14-03-2003
DOI: 10.1017/S1431927603030228
Abstract: In variable pressure scanning electron microscopy (VPSEM) the current data suggests that considerable caution is required in the interpretation of X-ray data from nonconductive s les, depending on the operating conditions. This article reviews some of the documented approaches and presents data that illustrate the nature and magnitude of the effects of charge above, on, and in the s le on the detected X-ray emissions from the s le and from elsewhere within the VPSEM specimen chamber. The collection of reliable and reproducible X-ray data has been found to require relatively high specimen chamber gas pressures, at the upper end of or beyond the available pressures for most VPSEMs. It is also shown that s le characteristics, including composition, strongly influence local charge effects, which can significantly affect the primary electron landing energy and consequently the resultant emitted X-ray signal under low pressure environments.
Surface-tailored nanodiamonds as excellent metal-free catalysts for organic oxidation
Publisher: Elsevier BV
Date: 07-2016
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Publisher: AIP Publishing
Date: 15-03-1999
DOI: 10.1063/1.123625
Abstract: Delta doping with antimony isovalent impurity has been employed as a precursor for two-dimensional precipitation of excess arsenic in GaAs grown by molecular-beam epitaxy at low substrate temperature (LT-GaAs), and subsequently annealed. LT-GaAs films delta doped with indium isovalent impurity showed previously to provide two-dimensional As cluster sheets were studied for comparison. Small clusters observed by transmission electron microscopy at the Sb delta layers had an unusual lens shape and, probably, nonrhombohedral microstructure. These clusters induced strong local strains in the surrounding GaAs matrix. After annealing under the same conditions, the clusters at the Sb delta layers were found to be bigger than those at the In delta layers. Additionally, nucleation of the arsenic clusters at the Sb delta layers occurs at a relatively low annealing temperature. The observed precipitation features indicate that delta doping with Sb is more effective for two-dimensional precipitation of the excess As in LT-GaAs as compared with In delta doping.
Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
Publisher: Springer Science and Business Media LLC
Date: 2002
DOI: 10.1557/PROC-745-N9.12/T7.12
Abstract: (Ba,Sr)TiO 3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO 2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO 2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density D it of an order of magnitude was observed for oxidized Si substrates.
Surface controlled generation of reactive radicals from persulfate by carbocatalysis on nanodiamonds
Publisher: Elsevier BV
Date: 10-2016
Structural transformations in low-temperature grown GaAs:Sb
Publisher: IOP Publishing
Date: 03-05-2001
Characterization of plasmonic nanostructures by analytical TEM
Publisher: IOP Publishing
Date: 02-07-2012
HREM study of ion implantation in 6H-SiC at high temperatures
Publisher: Oxford University Press (OUP)
Date: 1997
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
Publisher: Pleiades Publishing Ltd
Date: 05-2000
DOI: 10.1134/1.1188034
Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors
Publisher: American Chemical Society (ACS)
Date: 25-06-2020
Fabrication of Si–C–N compounds in silicon carbide by ion implantation
Publisher: Elsevier BV
Date: 05-2009
Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs
Publisher: IEEE
Date: 2000
Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices
Publisher: IEEE
Date: 2000
Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
Publisher: Elsevier BV
Date: 08-1998
Effects of Ad-atom Diffusivity Throughout Sb-Mediated Formation of Ge/Si Nanoislands
Publisher: Springer Science and Business Media LLC
Date: 2012
DOI: 10.1557/OPL.2012.758
Abstract: The effect of Sb on the formation of Ge nano islands in Si by means of molecular beam epitaxy is reported. We observe in the Ge/Si(100) system a non-monotonic dependence of the Stranski-Krastanov critical thickness of Ge islands formation on the adsorbed Sb amount. Dome- and hut-shaped Ge islands are replaced with the pyramids, when Ge is deposited on the Sb-covered Si(100) surface. The Sb-mediated conservation of the shape of Ge islands during embedding them in Si is shown. We assume that the decrease of the surface diffusion of Si and Ge ad-atoms causes these effects.
On the mechanism of spin-dependent (e,2e) scattering from a ferromagnetic surface
Publisher: IOP Publishing
Date: 09-2009
Secondary electron imaging of SiC-based structures in secondary electron microscope
Publisher: Elsevier BV
Date: 09-2007
Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin films
Publisher: Elsevier BV
Date: 10-2007
Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters
Publisher: Pleiades Publishing Ltd
Date: 09-2000
DOI: 10.1134/1.1309425
Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
Publisher: Trans Tech Publications, Ltd.
Date: 07-1997
Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates
Publisher: AIP Publishing
Date: 19-02-2004
DOI: 10.1063/1.1645647
Abstract: ( Ba,Sr ) TiO 3 ( BST ) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance–voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.
Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cuba
Publisher: Mineralogical Society of America
Date: 08-2018
DOI: 10.2138/AM-2018-6424
Defect characterization in high temperature implanted 6HSiC using TEM
Publisher: Elsevier BV
Date: 05-1997
Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
Publisher: Pleiades Publishing Ltd
Date: 10-1997
DOI: 10.1134/1.1187030
Lateral association of vertically-coupled quantum dots
Publisher: Elsevier BV
Date: 08-0010
Formation of InSb quantum dots in a GaSb matrix
Publisher: Springer Science and Business Media LLC
Date: 05-1998
Colloidal Single-Layer Photocatalysts for Methanol-Storable Solar H2 Fuel
Publisher: Wiley
Date: 21-10-2019
Abstract: Molecular surfactants are widely used to control low-dimensional morphologies, including 2D nanomaterials in colloidal chemical synthesis, but it is still highly challenging to accurately control single-layer growth for 2D materials. A scalable stacking-hinderable strategy to not only enable exclusive single-layer growth mode for transition metal dichalcogenides (TMDs) selectively sandwiched by surfactant molecules but also retain sandwiched single-layer TMDs' photoredox activities is developed. The single-layer growth mechanism is well explained by theoretical calculation. Three types of single-layer TMDs, including MoS
Lateral association of vertically coupled quantum dots
Publisher: Pleiades Publishing Ltd
Date: 07-1997
DOI: 10.1134/1.1187076
In–Ga intermixing in low-temperature grown GaAs delta doped with In
Publisher: AIP Publishing
Date: 08-03-1999
DOI: 10.1063/1.123576
Abstract: Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In–Ga intermixing is observed in the films subjected to 500–700 °C isochronal anneals. The In–Ga interdiffusion diffusivity is evaluated. The effective activation energy for In–Ga interdiffusion is found to be 1.1±0.3 eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
Publisher: Elsevier BV
Date: 11-2006
Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions
Publisher: AIP Publishing
Date: 28-10-2004
DOI: 10.1063/1.1803923
Abstract: The diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) s les was investigated using secondary ion mass spectroscopy. The s les were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700°C for times ranging from 10to1800s in argon ambient or in the vapors of silicon and carbon. Transmission electron microscopy has been used to determine the structural properties of implanted layers after the annealing. The N concentration profiles remained unchanged after the annealing. B atoms showed transient enhanced out- and in-diffusion. The coimplantation reduced the fraction of mobile B atoms participating in out- and in-diffusion processes and resulted in an increase in the density and decrease in size of dislocation loops formed in the implanted layer. The B diffusion coefficients in both SiC polytypes have been determined and a diffusion mechanism has been discussed.
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Publisher: Elsevier BV
Date: 2000
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Publisher: Pleiades Publishing Ltd
Date: 08-1999
DOI: 10.1134/1.1187627
Conventional and Analytical Electron Microscopy Study of Phase Transformation in Implanted Diamondlayers
Publisher: Wiley
Date: 16-08-2013
Effect of annealing on the structural, electrical and magnetic properties of Gd-implanted ZnO thin films
Publisher: Springer Science and Business Media LLC
Date: 31-08-2011
Synthesis of buried silicon nitride layer in SiC by nitrogen implantation
Publisher: Elsevier BV
Date: 04-2007
A FIB-STEM study of strontium segregation and interface formation of directly assembled La0.6Sr0.4Co0.2Fe0.8O3-δ Cathode on Y2O3-ZrO2 electrolyte of solid oxide fuel cells
Publisher: The Electrochemical Society
Date: 2018
DOI: 10.1149/2.0151807JES
Heteroatom (N or N-S)-Doping Induced Layered and Honeycomb Microstructures of Porous Carbons for CO2 Capture and Energy Applications
Publisher: Wiley
Date: 28-10-2016
Processing and Properties of BioCeramic Coatings onto 3D Ti‐Mesh by DipCasting Method
Publisher: Wiley
Date: 22-05-2013
DOI: 10.1111/IJAC.12117
Pressure leach of β-spodumene with carbonic acid: Weak acid process for extraction of lithium
Publisher: Elsevier BV
Date: 12-2023
In situ assembled La0.8Sr0.2MnO3 cathodes on a Y2O3-ZrO2 electrolyte of solid oxide fuel cells-interface and electrochemical activity
Publisher: Royal Society of Chemistry (RSC)
Date: 2016
DOI: 10.1039/C6RA23286H
Abstract: Polarization can induce an LSM/YSZ interface which is electrochemically compatible with the one formed under high temperature sintering.
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