ORCID Profile
0009-0007-5768-8757
Current Organisation
Murdoch University
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Publisher: Elsevier BV
Date: 2004
Publisher: Elsevier BV
Date: 2001
Publisher: Elsevier BV
Date: 03-1995
Publisher: IEEE
Date: 17-12-2021
Publisher: Elsevier BV
Date: 06-1998
Publisher: Elsevier BV
Date: 2004
Publisher: IEEE
Date: 14-09-2020
Publisher: Elsevier BV
Date: 08-1998
Publisher: American Physical Society (APS)
Date: 15-04-1994
Publisher: Routledge
Date: 06-12-2012
Publisher: Wiley
Date: 12-1993
Publisher: Elsevier BV
Date: 07-1999
Publisher: American Physical Society (APS)
Date: 15-08-1994
Publisher: Elsevier BV
Date: 07-1997
Publisher: Springer Science and Business Media LLC
Date: 2000
Abstract: The optical quantum efficiency and spectral response of p-i-n thin film amorphous silicon (a-Si:H) solar cells have been modeled using software based on optical admittance analysis. The optical constants of a-Si:H and Indium Tin Oxide (ITO) thin film layers have been measured by Variable Angle Spectroscopic Ellipsometry (VASE) and used as inputs into the optical admittance analysis program in order to model cells constructed from these films. Amorphous silicon thin films and p-i-n assemblies have been deposited by glow discharge and reactive sputtering techniques. The optical constants of doped and intrinsic a-Si:H thin films were determined by VASE and the film thickness verified by Scanning Electron Microscopy studies. The optical constants of commercially available transparent conducting oxide (TCO) coated substrates have also been determined by VASE. The experimental transmission spectra of p-i-n assemblies are compared with transmission spectra that have been modeled using the measured optical constants. Results of modeling different a-Si:H solar cell structures using these materials are presented, including a study of the optimal TCO layer thickness for p-i-n a-Si:H solar cells. This work shows that optical admittance modeling gives a good prediction of the optical behavior of p-i-n assemblies, but that accurate measurements of the optical constants of the component films are required in order to model effectively the optical quantum efficiency and photocurrent.
Publisher: CSIRO Publishing
Date: 1990
DOI: 10.1071/PH900535
Abstract: X-ray excited Si LZ3 VV spectra have been measured for both disordered crystalline silicon and chemical vapour deposited amorphous silicon. A method, based on the Simplex algorithm, has been applied to enable the Si LZ3VV peak to be decomposed into its L23MJM23, L23Mz3M23 and localised two-hole components. Changes in the relative amounts of the LZ3 VV components have been compared with changes upon hydrogenation by direct hydrogen ion bombardment for both the disordered c-Si and a,Si s les. Recent published results related to monitoring the effects of disorder and then hydrogenation on silicon surfaces using the Si LZ3 VV Auger line shape are reviewed and show good agreement with the results obtained. In agreement with others it is concluded that the hydrogen decreases the localised defect states in the bandgap and creates new states in the valence band. It is shown that the effect is more pronounced in disordered a-Si than in disordered coSio Hydrogenation of this sort is effective in improving the electrical properties of the films, especially for chemical vapour deposition films.
Publisher: Elsevier BV
Date: 04-1997
Publisher: IEEE
Date: 11-2017
Publisher: IEEE
Date: 26-09-2021
Publisher: Springer Science and Business Media LLC
Date: 1982
DOI: 10.1007/BF00664333
Publisher: IEEE
Date: 09-2019
Publisher: Elsevier BV
Date: 11-1996
Publisher: Elsevier BV
Date: 2001
Publisher: Elsevier BV
Date: 2001
Publisher: Wiley
Date: 1997
DOI: 10.1002/(SICI)1096-9918(199701)25:1<10::AID-SIA201>3.0.CO;2-#
Publisher: No publisher found
Date: 1997
DOI: 10.1002/(SICI)1096-9918(199701)25:1<10::AID-SIA201>3.0.CO;2-%23
Publisher: Elsevier BV
Date: 04-1994
Publisher: IEEE
Date: 26-09-2021
Publisher: Elsevier BV
Date: 04-1996
Publisher: American Physical Society (APS)
Date: 15-02-1997
Publisher: American Physical Society (APS)
Date: 15-12-1994
Publisher: Elsevier BV
Date: 02-2002
Publisher: Elsevier BV
Date: 2001
Publisher: Elsevier BV
Date: 04-1998
Publisher: Elsevier BV
Date: 02-1994
Publisher: IEEE
Date: 2006
Publisher: SAGE Publications
Date: 06-1994
DOI: 10.2190/9A08-Y2Q0-6AER-6KLQ
Abstract: This article examines the effect of metacognitive instruction on students' achievement in introductory programming courses over traditional predictors of performance. Metacognitive instruction was conceptualized as a package, aimed at inducing students to develop a metacognitive strategy relevant for computer programming via interactive teaching. The metacognitive strategy consisted of a five-step planning strategy to guide students' program planning process. The interactive teaching approach involved explicit modeling, coaching and collaborative learning. An experimental field study conducted with twenty-eight experimental and twenty-eight matched control students revealed that metacognitive instruction is a better explanatory construct for students' computing performance than traditional person variables such as background knowledge, program major, gender or age. The impact of metacognitive instruction on the learning processes and outcomes of students with different personal characteristics was systematically examined.
Publisher: MDPI AG
Date: 02-11-2017
DOI: 10.3390/EN10111764
No related grants have been discovered for Christopher Lund.